| Full text | |
| Author(s): |
Da Fonte, Ewerton Teixeira
;
Trevisoli, Renan
;
Barraud, Sylvain
;
Doria, Rodrigo T.
Total Authors: 4
|
| Document type: | Journal article |
| Source: | Solid-State Electronics; v. 194, p. 6-pg., 2022-08-01. |
| Abstract | |
This paper presents an extraction method for the interface traps density on Junctionless Transistors (JNTs) using an adapted charge pumping technique. To the best of our knowledge, this is the first work to apply this method in JNTs. Initially, it was stated through numerical simulations that a transient current, which increases with the trap density, is observed in the devices when the charge pumping method is applied. Then, a measurement setup was proposed to extract the pumping current resultant from a gate pulse and a mathematical expression was proposed to extract the density of trapped charges in the Oxide/Silicon interface (N-it). Aiming to demonstrate the method applicability for determining the JNTs interface quality, it was applied to simulations considering different trap densities as well as to experimental data of Junctionless Nanowire Transistors. It was observed that the method accuracy increases for larger trap densities and presents agreement to theoretical data for Nit > 1 x 10(11) cm(-2). (AU) | |
| FAPESP's process: | 19/15500-5 - Atomistic simulation of nanowire MOSFETs electrical properties |
| Grantee: | Marcelo Antonio Pavanello |
| Support Opportunities: | Regular Research Grants |