| Full text | |
| Author(s): |
R.F. Oliveira
;
A.B. Henriques
[2]
;
T.E. Lamas
[3]
;
A.A. Quivy
[4]
;
M.P. Pires
[5]
;
P.L. Souza
[6]
;
B. Yavich
[7]
;
E. Abramof
[8]
Total Authors: 8
|
| Document type: | Journal article |
| Source: | Brazilian Journal of Physics; v. 34, p. 650-652, 2004-06-00. |
| Abstract | |
We have studied doped superlattices of GaAs/AlGaAs composition. When the doping atoms are introduced into the barriers surrounding the superlattice, as well as to the inner ones, but with half of the concentration, the photoluminescence due to interband transitions from extended superlattice states is detected. This is demonstrated by a study of the sample´s photoluminescence in a magnetic field, whose intensity oscillates in concomitance with the SdH spectrum of electrons confined in the miniband. (AU) | |
| FAPESP's process: | 99/10359-7 - Research on semiconductors involving low temperatures and high magnetic fields |
| Grantee: | Nei Fernandes de Oliveira Junior |
| Support Opportunities: | Research Projects - Thematic Grants |