| Full text | |
| Author(s): |
Oliveira, R. A. R.
;
Purificacao, D. D.
;
Pereyra, I.
;
Carreno, M. N. P.
;
IEEE
Total Authors: 5
|
| Document type: | Journal article |
| Source: | 2022 36TH SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY (SBMICRO 2022); v. N/A, p. 4-pg., 2022-01-01. |
| Abstract | |
In this work, results on silicon thin film deposition utilizing a new micro LPCVD technique, based on a MEMS-based microheater device, are presented. This micro LPCVD technique was presented and validated in previous work, where the deposition of mu c-silicon from SiH4, at a pressure of 1 Torr and temperature of 739 degrees C was demonstrated. In this work the study is furthered by Si deposition at different temperatures between 650 degrees C and 1054 degrees C and the analysis of the heated region dimensions in each case. The way the material forms along the heated region was also verified and it was observed that in the same process, amorphous, semi-crystalline, and polycrystalline phases are obtained. The temperature and thermal response of the microheaters were estimated by Multiphysics simulation and from real-time measurements of the microheaters' electrical resistance. (AU) | |
| FAPESP's process: | 18/08782-1 - Miniaturized and integrated chemical sensors: new fabrication platforms for biological, clinical and environmental applications |
| Grantee: | Mauro Bertotti |
| Support Opportunities: | Research Projects - Thematic Grants |