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Polaron-assisted electronic transport in ZnP2 nanowires

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Author(s):
de Oliveira, F. M. ; Cabral, L. ; Villegas-Lelovsky, L. ; Lima, Matheus P. ; Aragon, F. F. H. ; Marques, G. E. ; Chiquito, A. J. ; Teodoro, M. D.
Total Authors: 8
Document type: Journal article
Source: JOURNAL OF MATERIALS CHEMISTRY C; v. 11, n. 12, p. 11-pg., 2023-02-14.
Abstract

In this work, carrier transport in a gold-seeded zinc diphosphide nanowire fabricated by vapor-liquid-solid and photolithography techniques is investigated in detail. The presence of zinc vacancies and interstitial phosphorus along the nanostructure resulted in defect levels evidenced by photoluminescence transitions observed in the near-infrared spectral range (800-900 nm). The electronic transport measurements by thermally stimulated current identified an activation energy of 80 meV, as well as a defect state with photoluminescence emission at 1.40 eV. The electronic transport in the transient regime was verified for temperatures below 50 K up to room temperature, and the photocurrent relaxation was described by a phenomenological model. We observed a well defined square-wave photoresponse of hundreds of nanoamperes per second during 532 nm light excitation, justifying the potential use of the device as a light sensor. Also, for the first time, ab initio calculations were performed considering defects of a Zn monovacancy close to an interstitial P atom to describe the luminescence transitions. The systematic use of a hybrid functional for these defects allows us to determine the presence of polarons due to the distortion of atomic bonds. Through the electronic property simulations, we corroborated the nature of p-type transport in zinc diphosphide nanowires. (AU)

FAPESP's process: 14/02112-3 - Optical and transport phenomena in nano-devices
Grantee:Victor Lopez Richard
Support Opportunities: Regular Research Grants
FAPESP's process: 13/17639-4 - Obtainment of nanostructured semiconductors: correlation of the photocatalytic properties to their structural characteristic
Grantee:Waldir Avansi Junior
Support Opportunities: Regular Research Grants
FAPESP's process: 13/18719-1 - Electronic carriers dynamics in semiconductor nanostructures
Grantee:Marcio Daldin Teodoro
Support Opportunities: Research Grants - Young Investigators Grants
FAPESP's process: 18/20729-9 - Formation of Ag Nanoparticles by Laser Irradiation: An ab inicio Investigation
Grantee:Luis Antônio Cabral
Support Opportunities: Scholarships in Brazil - Post-Doctoral
FAPESP's process: 14/19142-2 - Characterization and processing of semiconductor nanostructures and application as devices
Grantee:Gilmar Eugenio Marques
Support Opportunities: Research Projects - Thematic Grants
FAPESP's process: 13/19692-0 - Quantitative study of the electronic characteristics of metal-metal oxides nanowires contacts
Grantee:Adenilson José Chiquito
Support Opportunities: Regular Research Grants
FAPESP's process: 16/14381-4 - Semiconducting nanowires for fotovoltaic devices
Grantee:Adenilson José Chiquito
Support Opportunities: Regular Research Grants