Optical and Structural Properties of Emerging Dilute III-V Bismides

Author(s)

Bononi dos Santos, B. H. ; Galvao Gobato, Y. ; Henini, M.

• Document type: Journal article
• Source: APPLIED SCIENCE AND CONVERGENCE TECHNOLOGY; v. 23, n. 5, p. 10-pg., 2014-09-01.

Abstract

In this paper, we present a review of optical and structural studies of GaBixAs1-x epilayers grown by Molecular Beam Epitaxy (MBE) on (311)B and (001) GaAs substrates with different As fluxes. The results indicate that under near-stoichiometric conditions the bismuth incorporation is higher for samples grown on (311) B GaAs substrates than for those grown on (001) GaAs. In addition, carrier localization effects in GaBiAs layers are clearly revealed for both samples by optical measurements. The (311) B samples showed evidence of higher density of defects. It has also been found that the nonradiative centers play a significant role in the recombination process in this material system. The influence of post-growth annealing on the microstructural, optical, and magneto-optical properties was also investigated. An important improvement of optical and spin properties after thermal annealing due to the reduction of defects in the GaBiAs layers was observed. (AU)

• FAPESP's process: 12/24055-6 - Optical, electrical and spin properties of semiconductor nanostructures and nanodevices
• Grantee: Yara Galvão Gobato
• Support Opportunities: Regular Research Grants