Low-Frequency Noise in Asymmetric Self-Cascode FD SOI nMOSFETs

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Author(s):	Assalti, R. ; Doria, R. T. ; Pavanello, M. A. ; de Souza, M. ; Flandre, D. ; IEEE Total Authors: 6
Document type:	Journal article
Source:	2016 31ST SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES (SBMICRO); v. N/A, p. 4-pg., 2016-01-01.
Abstract
This paper investigates the origin of low-frequency noise in Asymmetric Self-Cascode Fully Depleted SOI nMOSFETs biased in linear regime with regards to the variation of gate voltage and the channel doping concentration through experimental results. (AU)

FAPESP's process:	15/08616-6 - Modeling, Simulation and Fabrication of Analog Circuits with Asymmetric Self-Cascode SOI Transistors
Grantee:	Rafael Assalti
Support Opportunities:	Scholarships in Brazil - Doctorate