| Full text | |
| Author(s): |
Villegas, Cesar E. P.
;
Vasquez-Marcani, Aider
;
Rocha, Alexandre R.
Total Authors: 3
|
| Document type: | Journal article |
| Source: | American Journal of Physics; v. 92, n. 5, p. 7-pg., 2024-05-01. |
| Abstract | |
Textbooks often present the phenomenon of screening within the Thomas-Fermi model for three-dimensional free electron gases, but obtaining the dielectric response function and screening potential for dielectric systems of reduced dimensionality is also of pedagogical interest. In this work, we introduce a simple approach to investigate static screening in dielectric systems in the presence of an impurity charge for different dimensionalities. This approach is applicable to semiconductors and insulators alike. We demonstrate that, in 3D systems, the macroscopic dielectric function in reciprocal space is a constant, while in 2D and 1D systems, it strongly depends on the momentum transferred to the electrons in the dielectric. Through the proposed dielectric screening model, one can also determine binding energies in a hydrogenic model that can be used to describe excitations in real semiconductor systems. (c) 2024 Published under an exclusive license by American Association of Physics Teachers. (AU) | |
| FAPESP's process: | 16/01343-7 - ICTP South American Institute for Fundamental Research: a regional center for theoretical physics |
| Grantee: | Nathan Jacob Berkovits |
| Support Opportunities: | Special Projects |
| FAPESP's process: | 17/02317-2 - Interfaces in materials: electronic, magnetic, structural and transport properties |
| Grantee: | Adalberto Fazzio |
| Support Opportunities: | Research Projects - Thematic Grants |