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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Nanoscale lateral switchable rectifiers fabricated by local anodic oxidation

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Author(s):
Siles, Pablo F. [1, 2] ; Archanjo, B. S. [3] ; Baptista, D. L. [3] ; Pimentel, V. L. [1] ; Yang, J. Joshua [4] ; Neves, B. R. A. [5] ; Medeiros-Ribeiro, G. [4]
Total Authors: 7
Affiliation:
[1] Lab Nacl Luz Sincrotron, BR-13083970 Campinas, SP - Brazil
[2] Univ Estadual Campinas, UNICAMP, Inst Fis Gleb Wataghin, BR-13083859 Campinas, SP - Brazil
[3] Inst Nacl Metrol Normalizacao & Qualidade Ind INM, Div Mat Metrol, BR-25250020 Duque De Caxias, RJ - Brazil
[4] Hewlett Packard Labs, Palo Alto, CA 94304 - USA
[5] Univ Fed Minas Gerais, Dept Fis, BR-30123970 Belo Horizonte, MG - Brazil
Total Affiliations: 5
Document type: Journal article
Source: Journal of Applied Physics; v. 110, n. 2 JUL 15 2011.
Web of Science Citations: 10
Abstract

Scanning probe lithography as a mean to pattern, implement, and discover new devices in different materials systems provides an elevated degree of flexibility, permitting one to tailor device geometries and structures at will, in particular by virtue of modification of the local chemistry. Here we define metal-insulator-metal junctions exhibiting a switchable rectifier behavior by patterning titanium channels through local anodic oxidation techniques. The nanoscale TiO(2) junctions thus formed exhibit IV characteristics with non-volatile switchable rectification and memristive behavior due to ionic motion through the metal-semiconductor interfaces. VC 2011 American Institute of Physics. {[}doi:10.1063/1.3609065] (AU)

FAPESP's process: 05/04643-7 - Electronic properties of isolated nanostructures small ensembles
Grantee:Pablo Roberto Fernández Siles
Support Opportunities: Scholarships in Brazil - Doctorate