Study of the effect of multiple conductions on threshold voltage in a MIS-HEMT from 450 K down to 200 K

Author(s)

Perina, Welder F. ; Martino, Joao A. ; Simoen, Eddy ; Peralagu, Uthayasankaran ; Collaert, Nadine ; Agopian, Paula G. D.

• Document type: Journal article
• Source: 2023 37TH SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES, SBMICRO; v. N/A, p. 3-pg., 2023-01-01.

Abstract

In this work, the effect of the multiple conductions of a GaN based Metal-Insulator-Semiconductor High Electron Mobility Transistor (MIS-HEMT) when operating in a temperature range from 200K to 450K are evaluated experimentally. From 200K till 350 K the transfer curve of the 600nm gate length device shows the Zero Temperature Coefficient (ZTC) point clearly. However, for temperatures over 350 K, the threshold voltage (V-TH) shift towards higher gate voltage, which prevents the presence of ZTC bias point. This behavior is better explained through the transconductance ( gm) curve where the HEMT and MOS conductions of the devices are being affected differently by temperature, resulting in a competition of effects that changes the behavior of the device in both, gm(max) and VTH as a function of temperature. (AU)

• FAPESP's process: 20/04867-2 - High energy physics and instrumentation with the LHC-CERN
• Grantee: Marcelo Gameiro Munhoz
• Support Opportunities: Special Projects