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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Sketched oxide single-electron transistor

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Author(s):
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Cheng, Guanglei [1] ; Siles, Pablo F. [2, 3] ; Bi, Feng [1] ; Cen, Cheng [1] ; Bogorin, Daniela F. [1] ; Bark, Chung Wung [4] ; Folkman, Chad M. [4] ; Park, Jae-Wan [4] ; Eom, Chang-Beom [4] ; Medeiros-Ribeiro, Gilberto [5] ; Levy, Jeremy [1]
Total Authors: 11
Affiliation:
[1] Univ Pittsburgh, Dept Phys & Astron, Pittsburgh, PA 15260 - USA
[2] Lab Nacl Luz Sincrotron, BR-13083970 Campinas, SP - Brazil
[3] Univ Estadual Campinas UNICAMP, Inst Fis Gleb Wataghin, Campinas, SP - Brazil
[4] Univ Wisconsin, Dept Mat Sci & Engn, Madison, WI 53706 - USA
[5] Hewlett Packard Labs, Palo Alto, CA 94304 - USA
Total Affiliations: 5
Document type: Journal article
Source: NATURE NANOTECHNOLOGY; v. 6, n. 6, p. 343-347, JUN 2011.
Web of Science Citations: 82
Abstract

Devices that confine and process single electrons represent an important scaling limit of electronics(1,2). Such devices have been realized in a variety of materials and exhibit remarkable electronic, optical and spintronic properties(3-5). Here, we use an atomic force microscope tip to reversibly `sketch' single-electron transistors by controlling a metal-insulator transition at the interface of two oxides(6-8). In these devices, single electrons tunnel resonantly between source and drain electrodes through a conducting oxide island with a diameter of similar to 1.5 nm. We demonstrate control over the number of electrons on the island using bottom-and side-gate electrodes, and observe hysteresis in electron occupation that is attributed to ferroelectricity within the oxide heterostructure. These single-electron devices may find use as ultradense non-volatile memories, nanoscale hybrid piezoelectric and charge sensors, as well as building blocks in quantum information processing and simulation platforms. (AU)

FAPESP's process: 05/04643-7 - Electronic properties of isolated nanostructures small ensembles
Grantee:Pablo Roberto Fernández Siles
Support Opportunities: Scholarships in Brazil - Doctorate