Bias stress testing of ZnO and IGZO transistors based on novel testing procedure

• Grant number: 19/05620-3
• Support Opportunities: Research Grants - Visiting Researcher Grant - International
• Start date: September 11, 2019
• End date: September 26, 2019
• Field of knowledge: Physical Sciences and Mathematics - Physics - Condensed Matter Physics
• Agreement: CONFAP ; Newton Fund, with FAPESP as a partner institution in Brazil ; UK Academies
• Principal Investigator: Lucas Fugikawa Santos
• Grantee: Lucas Fugikawa Santos
• Visiting researcher: Jeff Kettle
• Visiting researcher institution: Bangor University, Wales
• Host Institution: Instituto de Geociências e Ciências Exatas (IGCE). Universidade Estadual Paulista (UNESP). Campus de Rio Claro. Rio Claro , SP, Brazil

Abstract

This proposal seeks to address the need for high performing metal oxide transistors that remain stable during prolonged periods of biasing. The focus of the project will be on developing new testing procedures for characterising and measuring the functional device stability to quantify the implications of the manufacturing process on the device properties and stability. However, in parallel to studying the stability of solution processed metal oxides TFTs, we will also test metal oxides TFTs made using sputter coating. By using sputtering, we will be studying stability of devices which are more already adopted by industry, thus making our research of immediate relevance. However, by simultaneously studying spray coated device stabilities, we are also understanding the stability of next generation of materials. At the moment, the reproducibility of spray coated IGZO TFTs is much lower than their sputtered counterparts, although this is expected to improve over the next few months-years as the technology matures. The work-program is split into 4 workpackages with activity taking place before and after visiting Brazil. (AU)

Scientific publications

(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)

GOMES, TIAGO C.; KUMAR, DINESH; ALVES, NERI; KETTLE, JEFF; FUGIKAWA-SANTOS, LUCAS. The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors. JOVE-JOURNAL OF VISUALIZED EXPERIMENTS, n. 159, MAY 2020. (19/08019-9, 14/13904-8, 16/03484-7, 19/05620-3, 19/01671-2)

KUMAR, DINESH; GOMES, TIAGO CARNEIRO; ALVES, NERI; FUGIKAWA-SANTOS, LUCAS; SMITH, GRAHAM C.; KETTLE, JEFF. UV Phototransistors-Based Upon Spray Coated and Sputter Deposited ZnO TFTs. IEEE SENSORS JOURNAL, v. 20, n. 14, p. 7532-7539, JULY15, 2020. (19/05620-3, 14/13904-8, 16/03484-7)

GOMES, TIAGO C.; KUMAR, DINESH; ALVES, NERI; KETTLE, JEFF; FUGIKAWA-SANTOS, LUCAS. The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors. JOVE-JOURNAL OF VISUALIZED EXPERIMENTS, v. N/A, n. 159, p. 8-pg., 2020-05-01. (19/01671-2, 16/03484-7, 19/05620-3, 14/13904-8, 19/08019-9)