| Full text | |
| Author(s): |
Rodrigues, C. G.
;
Fernandez, J. R. L.
;
Leite, J. R.
;
Chitta, V. A.
;
Freire, V. N.
;
Vasconcellos, A. R.
;
Luzzi, R.
Total Authors: 7
|
| Document type: | Journal article |
| Source: | Journal of Applied Physics; v. 95, n. 9, p. 4914-4917, May 2004. |
| Field of knowledge: | Physical Sciences and Mathematics - Physics |
| Abstract | |
We consider the nonequilibrium thermodynamic state of carriers in III-nitrides, and calculate the mobility of holes in cubic GaN layers under electric fields of low intensity. The contribution of different scattering mechanisms to the mobility is analyzed, and the relevance of each one is characterized. Satisfactory agreement with recently published experimental data is obtained. (AU) | |
| FAPESP's process: | 02/06694-0 - Statistical Mechanics of Dissipative Systems Group |
| Grantee: | Roberto Luzzi |
| Support Opportunities: | Research Projects - Thematic Grants |