Optical response at 1.3 mu m and 1.5 mu m with InAs quantum dots embedded in a pure GaAs matrix

Silva, M. J. da; Quivy, A. A.; Martini, S.; Lamas, T. E.; Silva, E. C. F. da; Leite, J. R.

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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Optical response at 1.3 mu m and 1.5 mu m with InAs quantum dots embedded in a pure GaAs matrix

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Author(s):	Silva, M. J. da ; Quivy, A. A. ; Martini, S. ; Lamas, T. E. ; Silva, E. C. F. da ; Leite, J. R. Total Authors: 6
Document type:	Journal article
Source:	Journal of Crystal Growth; v. 251, n. 1/4, p. 181-185, Apr. 2003.
Field of knowledge:	Physical Sciences and Mathematics - Physics
Abstract
We demonstrated that the growth of InAs on GaAs at rates as low as 0.003 ML/s can be used to form quantum dots (QDs) that are optically active at 1.3 and 1.5 mum. The emission at 1.5 mum (at 300 K) originating from individual InAs QDs embedded in a pure GaAs matrix is close to the important telecom window at 1.55 mum. Such emission is related to a narrow distribution of islands with a height peaked around 15 nm as shown by atomic-force microscopy. (AU)

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