Ex-situ investigation of indium segregation in InGaAs/GaAs quantum wells using high-resolution x-ray diffraction

Martini, S.; Quivy, A. A.; Silva, M. J. da; Lamas, T. E.; Silva, E. C. F. da; Leite, J. R.; Abramof, E.

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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Ex-situ investigation of indium segregation in InGaAs/GaAs quantum wells using high-resolution x-ray diffraction

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Author(s):	Martini, S. ; Quivy, A. A. ; Silva, M. J. da ; Lamas, T. E. ; Silva, E. C. F. da ; Leite, J. R. ; Abramof, E. Total Authors: 7
Document type:	Journal article
Source:	Journal of Applied Physics; v. 94, n. 11, p. 7050-7052, Dec. 2003.
Field of knowledge:	Physical Sciences and Mathematics - Physics
Abstract
Calculations using the dynamical theory of diffraction together with a sample model which considers the segregation of indium atoms were employed to fit the high-resolution x-ray spectra of strained InGaAs/GaAs quantum wells grown by molecular-beam epitaxy. The segregation coefficients obtained from the best fits to the experimental data of samples grown at different temperatures are in excellent agreement with the expected values and confirm that x-ray diffraction is a valuable tool for the investigation of the segregation phenomenon. (AU)

FAPESP's process:	98/12779-0 - Experimental and theoretical study of the epitaxial semiconductor nanostructures derived from III-V compounds
Grantee:	Gennady Gusev
Support Opportunities:	Research Projects - Thematic Grants

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