| Full text | |
| Author(s): Show less - |
Fernandez, J. R. L.
;
Cerdeira, F.
;
Meneses, E. A.
;
Soares, J. A. N. T.
;
Noriega, O. C.
;
Leite, J. R.
;
As, D. J.
;
Köhler, U.
;
Salazar, D. G. P.
;
Schikora, D.
;
Lischka, K.
Total Authors: 11
|
| Document type: | Journal article |
| Source: | Microelectronics Journal; v. 35, n. 1, p. 73-77, Jan. 2004. |
| Field of knowledge: | Physical Sciences and Mathematics - Physics |
| Abstract | |
We report the results of studying the optical properties of cubic GaN thin films with photoluminescence and photoluminescence excitation spectroscopies. The films are deposited by plasma-assisted molecular beam epitaxy on GaAs (001) substrates, with and without intentional doping with carbon atoms (p-type doping). The evolution of the optical spectra of the C-doped samples is consistent with a picture in which carbon enters into N-vacancies at low concentrations, producing a marked improvement in the crystalline properties of the material. At higher concentrations it begins to form complexes, possibly due to interstitial occupation. The temperature dependence on the absorption edge of the doped material is also measured and is analyzed with standard theoretical models. (AU) | |
| FAPESP's process: | 01/01067-4 - Low-dimensional systems sciences |
| Grantee: | Jose Antonio Brum |
| Support Opportunities: | Research Projects - Thematic Grants |
| FAPESP's process: | 98/12779-0 - Experimental and theoretical study of the epitaxial semiconductor nanostructures derived from III-V compounds |
| Grantee: | Gennady Gusev |
| Support Opportunities: | Research Projects - Thematic Grants |