Amorphous and excimer laser annealed SiC films for TFT fabrication

Garcia‚ B.; Estrada‚ M.; Albertin‚ KF; Carreño‚ MNP; Pereyra‚ I.; Resendiz‚ L.

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(Reference retrieved automatically from Google Scholar through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Amorphous and excimer laser annealed SiC films for TFT fabrication

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Author(s):	Garcia‚ B. ; Estrada‚ M. ; Albertin‚ KF ; Carreño‚ MNP ; Pereyra‚ I. ; Resendiz‚ L. Total Authors: 6
Document type:	Journal article
Source:	Solid-State Electronics; v. 50, n. 2, p. 241-247, 2006.
Abstract
The characteristics of hydrogenated amorphous silicon carbide films prepared by PECVD and crystallized by KrF UV excimer laser annealing (ELA), for different annealing conditions, are studied to determine particulate size, surface roughness, band gap and resistivity in order to apply them to TFTs fabrication. Raman spectra for ELA SiC films indicate the presence of 6H-SiC polytype together with Si and C crystallites. We also describe the fabrication process to obtain a-Si1-xCx:H TFTs and ELA TFTs on the same wafer, comparing their output and transfer characteristics. (c) 2005 Elsevier Ltd. All rights reserved. (AU)

FAPESP's process:	00/10027-3 - Production, characterization and applications of semiconducting and insulating
Grantee:	Ines Pereyra
Support Opportunities:	Research Projects - Thematic Grants

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