Weak localization and electron-electron scattering in fluorine-doped SnO2 random nanobelt thin films

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Author(s):	Amorim, Cleber A. ^[1] ; Dalmaschio, Cleocir J. ^[2] ; Melzi, Andre L. R. ^[1] ; Leite, Edson R. ^[2] ; Chiquito, Adenilson J. ^[1] Total Authors: 5
Affiliation:	^[1] Univ Fed Sao Carlos UFSCar, Dept Fis, Transporte Eletron Nanoestruturas Nanolab, Sao Carlos, SP - Brazil ^[2] Univ Fed Sao Carlos UFSCar, Dept Quim, LIEC, Sao Carlos, SP - Brazil Total Affiliations: 2
Document type:	Journal article
Source:	JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS; v. 75, n. 5, p. 583-587, MAY 2014.
Web of Science Citations:	4
Abstract
Electronic properties of self-assembled high crystalline quality fluorine-doped tin oxide (FTO) nanobelts were studied. We report the experimental transport data of a thin film made using a dispersion of these single-crystal nanobelts. We have shown that the theory of weak localization in a weak disorder regime provides a reasonable description of the observed electrons' transport characteristics of fluorine doped tin oxide nanobelts thin films. Also, our results suggest that the macroscopic extrinsic disorder, related to the random distribution of nanobelts, does not give a noticeable contribution to the whole transport mechanism. (C) 2014 Elsevier Ltd. All rights reserved. (AU)

FAPESP's process:	11/10171-1 - Electronic transport and devices in diamond thin films
Grantee:	Adenilson José Chiquito
Support Opportunities:	Regular Research Grants