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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Structural, dielectric, ferroelectric and optical properties of PBCT, PBST and PCST complex thin films on LaNiO3 metallic conductive oxide layer coated Si substrates by the CSD technique

Full text
Author(s):
Pontes, D. S. L. [1] ; Chiquito, A. J. [2] ; Pontes, F. M. [3] ; Longo, E. [1, 4]
Total Authors: 4
Affiliation:
[1] Univ Fed Sao Carlos, CDMF, LIEC, Dept Chem, BR-13565905 Sao Carlos, SP - Brazil
[2] Univ Fed Sao Carlos, Dept Phys, NanO LaB, BR-13565905 Sao Carlos, SP - Brazil
[3] Univ Estadual Paulista, UNESP, Dept Chem, BR-17033360 Bauru, SP - Brazil
[4] Univ Estadual Paulista, UNESP, CDMF, LIEC, Inst Chem, Araraquara, SP - Brazil
Total Affiliations: 4
Document type: Journal article
Source: Journal of Alloys and Compounds; v. 609, p. 33-39, OCT 5 2014.
Web of Science Citations: 6
Abstract

Ferroelectric thin films and LaNiO3 (LNO) metallic conductive oxide thin films were prepared by a chemical solution deposition (CSD) method. PBCT60, PBST60 and PCST60 ferroelectric thin films were grown on different structures such as LNO/Si and single-crystalline quartz SiO2 (X-cut) substrates. The LNO layer acts as the bottom electrode for the electrical measurements. X-ray diffraction (XRD) analysis shows that LNO thin films on Si substrates and PBCT60, PBST60 and PCST60 thin films on LNO/Si structures are poly-crystalline with a moderate (110)-texture and a complete perovskite phase. LNO, PBCT60, PBST60 and PCST60 thin films have a continuous, dense and homogenous microstructure with a grain size on the order of 50-80 nm. Electrical resistivity-dependence temperature data confirm that LNO thin films display a good metallic character over a wide large range of temperatures. Optical characteristics of PBCT60, PBST60 and PCST60 thin films have also been investigated using ultraviolet-visible (UV-vis) spectroscopy in the wavelength range of 200-1100 nm. Ferroelectric thin films show a direct allowed optical transition with optical band gap values on the of order of 3.54, 3.66 and 3.89 eV for PBCT60, PCST60 and PBST60 thin films deposited on a SiO2 substrate, respectively. Good dielectric and ferroelectric properties are reported for ferroelectric thin films deposited on the LNO layer as bottom electrodes. Au/PBCT60/LNO/Si, Au/PBST60/LNO/Si and Au/PCST60/LNO/Si multilayer structures show a hysteresis loop with remnant polarization, P-r, of 9.6, 6.6 and 4.2 mu C/cm(2) at an applied voltage of 6 V for PBCT60, PBST60 and PCST60 thin films, respectively. (C) 2014 Elsevier B.V. All rights reserved. (AU)

FAPESP's process: 11/20536-7 - Multifunctional ferroelectric materials: studies of optical, electrical and photoluminescent properties
Grantee:Debora da Silva Lima Pontes
Support type: Scholarships in Brazil - Post-Doctorate
FAPESP's process: 13/07296-2 - CDMF - Center for the Development of Functional Materials
Grantee:Elson Longo da Silva
Support type: Research Grants - Research, Innovation and Dissemination Centers - RIDC