Spin in semiconductor nanostructures

• Grant number: 20/07255-8
• Support Opportunities: Regular Research Grants
• Start date: February 01, 2021
• End date: January 31, 2023
• Field of knowledge: Physical Sciences and Mathematics - Physics - Condensed Matter Physics
• Principal Investigator: Gilmar Eugenio Marques
• Grantee: Gilmar Eugenio Marques
• Host Institution: Centro de Ciências Exatas e de Tecnologia (CCET). Universidade Federal de São Carlos (UFSCAR). São Carlos , SP, Brazil
• Associated researchers: Euclydes Marega Junior ; Gregory J. Salamo ; José Francisco Miras Domenegueti ; Marcio Daldin Teodoro

Abstract

III-V Semiconductor nanostructures with the incorporation of the antimony element stand out for their strong spin-orbit coupling, which results are interesting for spin physics in optoelectronic experiments. Thanks to the improvement in growth techniques, the recent quality achieved in the growth of these materials has driven attention from the scientific community in this field. This project is therefore dedicated to two lines of research involving antimonides. In the first, structures containing InAs quantum dots followed by the growth of a GaAsSb layer have their optical transitions manipulated according to the content of antimony, in which for specific values, the fundamental transition can be of type-I or II. In this way, the recombination dynamics are controlled with the objective of obtaining relevant results in the spintronic field. In the second topic, we propose the investigation of a the so called plasmonics, in which quantum dots will be the light emitters coupled with a metallic surface for the generation of surface plasmons. Together, these topics cover interesting areas of basic physics research and applications in branches of the spin-photon and plasmonic interface. (AU)