Experimental and theoretical study of the epitaxial semiconductor nanostructures derived from III-V compounds

• Grant number: 98/12779-0
• Support Opportunities: Research Projects - Thematic Grants
• Start date: July 01, 1999
• End date: December 31, 2004
• Field of knowledge: Physical Sciences and Mathematics - Physics - Condensed Matter Physics
• Principal Investigator: Gennady Gusev
• Grantee: Gennady Gusev
• Host Institution: Instituto de Física (IF). Universidade de São Paulo (USP). São Paulo , SP, Brazil
• Associated research grant(s): 02/10711-7 - Ivan Costa da Cunha Lima | Instituto de Física/UERJ - Brazil, AV.BR; 00/05564-0 - Juergen Furthmuller | Institute fur Festkorpertheorie und Theoretische Optik - Alemanha, AV.EXT; 00/06022-6 - Yuri Alexander Pusep | Centro de Ciências Exatas e de Tecnologia/UFSCAR - Brazil, AV.BR

Abstract

The subject of the present project is the experimental and theoretical study of semiconductor nanostructures or low dimensional systems based on compounds of columns UI-V of the periodic table. This project refers to the growth and basic and applied study (experimental/theoretical) of epitaxial semiconductor nanostructures grown by Molecular Beam Epitaxy (MBE) derived from GaAs/AIGaAs, GaAs/InGaAs, GaAs/AlInAs, GaN/InGaN, GaN/AlGaN and their n- and p-type dopings. This project will be developed at the New Semiconductor Materials Laboratory atthe Institute of Physics of the University of São Paulo by a group of five full-time professors of the Institute, one professor of the São Francisco University, two post-doctors of FAPESP (Support for Science Foundation of the State São Paulo), two technicians of our Laboratory (LNMS), one administrativo technician, thirteen Ph.D. students (6supported by FAPESP), five M.S. students (one supported by FAPESP) and three undergraduate students. At the last five years, 6 Ph.D. and 14 M.S. students got their degrees at the LNMS. Besides, the group bas publisbed 88 papers in International Journals. Concerning with the subject of this project, the group of the LNMS bas been developing several topics of research: the growth and preparation of samples for basic research and for the fabrication of electronic and optoelectronic devices. The part that refers to the fabrication and characterization of devices is developed together with the Microelectronic Laboratory (LME) of the Polythecnic School at USP. The samples are grown in the MBE of our Laboratory and are based on the Ga, As, AI, In elements and on the dopant Si. Besides the samples that have been grown for the development of the topics of research of the LNMS, since 1991, samples for other groups of the country have been grown. For the next years, we intend with this project to continue the production of samples that show boles confinement, including type p planar doping structures, planar structures in wells, in alloys, etc. These samples are used to investigate fundamental basic concepts as manybody effects in one hole gas in a semiconductor. Samples of superlattices type n and p will be grown for being used in the vertical transport study through minibands in these nanostructures, aiming to confirm the theoretical predictions made b),the group. Systems formed by self-organized quantum dots will go on being produced and studied by several experimental and theoretical techniques. In the next years, the transport properties of a bidimensional electron gas coupled to these quantum dots will be studied and the transport Properties of a high mobility quasi tridimensional electron gas confined to parabolic quantum wells will be also studied with samples built at our laboratory. Using the work that bas been already done in theory and the excellent installations of the LNMS for high fields and low temperatures, studies of the properties of an electron gas and a gas of confined boles in two dimensions in the presence of a magnetic field will be done in the next years. Continuing the topic of research that particularly involves the III-V nitrides, in the next years, we will trespass the stage that involves the study of the bulk properties of the materials including the heterostructures. Attention will be given to tile study of the GaN/InGaN and GaN/AIGaN quantum wells and their respective type n (Si) and p (Mg) doping. (AU)

Scientific publications

(11)

(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)

T. E. LAMAS; A. A. QUIVY. InGaAs embedding of large InAs quantum dots obtained by pulsed in deposition for long-wavelength applications. Brazilian Journal of Physics, v. 36, p. 405-407, 2006-06-00. (98/12779-0)

FERNANDEZ, J. R. L.; CERDEIRA, F.; MENESES, E. A.; SOARES, J. A. N. T.; NORIEGA, O. C.; LEITE, J. R.; AS, D. J.; KÖHLER, U.; SALAZAR, D. G. P.; SCHIKORA, D.; et al. Near band-edge optical properties of cubic GaN with and without carbon doping. Microelectronics Journal, v. 35, n. 1, p. 73-77, Jan. 2004. (01/01067-4, 98/12779-0)

MARTINI, S.; QUIVY, A. A.; SILVA, E. C. F. DA; LEITE, J. R.. Real-time determination of the segregation strength of indium atoms in InGaAs layers grown by molecular-beam epitaxy. Applied Physics Letters, v. 81, n. 15, p. 2863-2865, Oct. 2002. (98/12779-0)

LAMAS‚ T. E.; QUIVY‚ A. A.; MARTINI‚ S.; SILVA‚ M. J.; LEITE‚ J. R.. Smooth p-type GaAs(001) films grown by molecular-beam epitaxy using silicon as the dopant. Thin Solid Films, v. 474, n. 1/2, p. 25-30, Mar. 2005. (98/12779-0)

LAMAS‚ TE; MARTINI‚ S.; DA SILVA‚ MJ; QUIVY‚ AA; LEITE‚ JR. Morphological and optical properties of p-type GaAs (001) layers doped with silicon. Microelectronics Journal, v. 34, n. 5, p. 701-703, 2003. (98/12779-0)

RUDNO-RUDZI{\’N}SKI‚ W.; RYCZKO‚ K.; S{\K{E}}K‚ G.; MISIEWICZ‚ J.; DA SILVA‚ MJ; QUIVY‚ AA. Photoreflectance study of energy level structure of self-assembled InAs/GaAs quantum dots emitting at 1.3 µm. Solid State Communications, v. 135, n. 4, p. 232-236, 2005. (98/12779-0)

FERNANDEZ‚ JRL; CERDEIRA‚ F.; MENESES‚ EA; BRASIL‚ M.; SOARES‚ J.; SANTOS‚ AM; NORIEGA‚ OC; LEITE‚ JR; AS‚ DJ; KÖHLER‚ U.; et al. Optical and x-ray diffraction studies on the incorporation of carbon as a dopant in cubic GaN. Physical Review B, v. 68, n. 15, p. 155204, 2003. (01/01067-4, 98/12779-0)

DA SILVA‚ MJ; MARTINI‚ S.; LAMAS‚ TE; QUIVY‚ AA; DA SILVA‚ ECF; LEITE‚ JR. Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3 µm. Microelectronics Journal, v. 34, n. 5, p. 631-633, 2003. (98/12779-0)

FERNANDEZ, J. R. L.; CERDEIRA, F.; MENESES, E. A.; BRASIL, M. J. S. P.; SOARES, J. A. N. T.; SANTOS, A. M.; NORIEGA, O. C.; LEITE, J. R.; AS, D. J.; KÖHLER, U.; et al. Optical and x-ray diffraction studies on the incorporation of carbon as a dopant in cubic GaN. Physical Review B, v. 68, n. 15, p. 155204-1-155204-7, Oct. 2003. (01/01067-4, 98/12779-0)

MARTINI, S.; QUIVY, A. A.; SILVA, M. J. DA; LAMAS, T. E.; SILVA, E. C. F. DA; LEITE, J. R.; ABRAMOF, E.. Ex-situ investigation of indium segregation in InGaAs/GaAs quantum wells using high-resolution x-ray diffraction. Journal of Applied Physics, v. 94, n. 11, p. 7050-7052, Dec. 2003. (98/12779-0)

DUARTE, C. A.; SILVA, E. C. F. DA; QUIVY, A. A.; SILVA, M. J. DA; MARTINI, S.; LEITE, J. R.; MENESES, E. A.; LAURETO, E.. Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots. Journal of Applied Physics, v. 93, n. 10, p. 6279-6283, May 2003. (98/12779-0)