P-type doping of gaas layers grown by mbe on top of (001) gaas substrates using silicon as a dopant.

• Grant number: 98/07545-0
• Support Opportunities: Research Grants - Meeting - Abroad
• Start date: August 31, 1998
• End date: September 08, 1998
• Field of knowledge: Physical Sciences and Mathematics - Physics - Condensed Matter Physics
• Principal Investigator: Alain André Quivy
• Grantee: Alain André Quivy
• Host Institution: Instituto de Física (IF). Universidade de São Paulo (USP). São Paulo , SP, Brazil