HBIFET Technology: process and characterization

• Grant number: 92/03453-8
• Support Opportunities: Research Projects - Thematic Grants
• Start date: November 01, 1993
• End date: June 30, 1999
• Field of knowledge: Engineering - Electrical Engineering - Electrical, Magnetic and Electronic Circuits
• Principal Investigator: Jacobus Willibrordus Swart
• Grantee: Jacobus Willibrordus Swart
• Host Institution: Faculdade de Engenharia Elétrica e de Computação (FEEC). Universidade Estadual de Campinas (UNICAMP). Campinas , SP, Brazil
• Associated research grant(s): 97/06907-3 - Sims analyses of silicon oxynitride films formed by n2+ and no+ implantation., AR.EXT

Abstract

In this this project, a new technology, which we call HBiFET, will be developed and studied, integrating MESFET and HBT stransistors on the same GaAs substrate. The project starts with the development of the MESFET and HBT transistors separately and the development of the following processing steps: optical lithography, electron-beam lithography, reactive ion etching, doping by ion implantation and rapid thermal annealing, deposition of insulating films on GaAs and study of the interface and N-p junction passivation, selective deposition of W for via filling to obtain a planarized surface of HBTs and finally, study and optimization of growth of HBT layers by CBE. (AU)