Advanced search
Start date
Betweenand
Related content

Field effect transistor with 170nm gate fabricated by atomic force lithography.

Grant number: 99/06576-2
Support Opportunities:Research Grants - Meeting - Brazil
Start date: August 09, 1999
End date: August 12, 1999
Field of knowledge:Engineering - Electrical Engineering - Electrical Materials
Principal Investigator:Roberto Ricardo Panepucci
Grantee:Roberto Ricardo Panepucci
Host Institution: Pessoa Física
Articles published in Agência FAPESP Newsletter about the research grant:
More itemsLess items
Articles published in other media outlets ( ):
More itemsLess items
VEICULO: TITULO (DATA)
VEICULO: TITULO (DATA)