Field effect transistor with 170nm gate fabricated by atomic force lithography.

Grant number:	99/06576-2
Support Opportunities:	Research Grants - Meeting - Brazil
Start date:	August 09, 1999
End date:	August 12, 1999
Field of knowledge:	Engineering - Electrical Engineering - Electrical Materials

Principal Investigator:	Roberto Ricardo Panepucci
Grantee:	Roberto Ricardo Panepucci

Host Institution:	Pessoa Física

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