Analog operation of multiple gate transistors in cryogenic environments

• Grant number: 07/04439-6
• Support Opportunities: Scholarships in Brazil - Doctorate
• Start date: October 01, 2007
• End date: September 30, 2010
• Field of knowledge: Engineering - Electrical Engineering - Electrical, Magnetic and Electronic Measurements, Instrumentation
• Principal Investigator: Marcelo Antonio Pavanello
• Grantee: Rodrigo Trevisoli Doria
• Host Institution: Escola Politécnica (EP). Universidade de São Paulo (USP). São Paulo , SP, Brazil

Abstract

The double gate MOS transistors are presented as an interesting alternative to solve the problems derived from the continuous reduction of the dimensions of MOS transistors, due to the excellent improvement in the performance of MOS devices with extremely submicrometer dimensions, with channel lengths smaller than 100 nm. Recently, from the concepts of double gate transistors, structures with multiple gates have been studied, thanks to the excellent control over the channel charges which can be obtained through the application of these devices. Nowadays, in the literature, several studies can be found with respect to the operation of these devices in digital circuits. However, a few publications have demonstrated the excellent potential of these devices to be applied in analog circuits, such as operational amplifiers, with performance superior to the MOS conventional technology. The operation of MOS transistors in low temperatures presents an important performance improvement when compared to the operation in room temperature, due to characterists such as the reduction in the subthreshold slope and the increase in the carriers mobility, among others, without the necessity of scaling the device dimensions. Traditionally, these improvements are explored aiming digital applications and only a few publications show the potential improvements obtained in analog circuits. However, analog circuits with high performance operating in criogenic environments are of huge importance, for instance, to the aerospacial electronic. In this work, a comparative study of the operation of double gate transistors in analog circuits as a function of the temperature, since 80 K up to 300 K, will be developed, combining the advantages due to the temperature reduction with the ones derived from the multiple gates structure.

Academic Publications

(References retrieved automatically from State of São Paulo Research Institutions)

DORIA, Rodrigo Trevisoli. Analog operation of multiple gate transistors as a function of the temperature.. 2010. Doctoral Thesis - Universidade de São Paulo (USP). Escola Politécnica (EP/BC) São Paulo.