Operation and Modeling of Junctionless MOSFETs in Cryogenic Environments

• Grant number: 10/00537-6
• Support type: Scholarships in Brazil - Doctorate
• Effective date (Start): April 01, 2010
• Effective date (End): March 31, 2013
• Field of knowledge: Engineering - Electrical Engineering - Electrical, Magnetic and Electronic Measurements, Instrumentation
• Principal Investigator: Marcelo Antonio Pavanello
• Grantee: Renan Trevisoli Doria
• Home Institution: Escola Politécnica (EP). Universidade de São Paulo (USP). São Paulo , SP, Brazil
• Associated research grant: 08/05792-4 - Design, fabrication and characterization of FinFET transistors, AP.TEM

Academic Publications

(References retrieved automatically from State of São Paulo Research Institutions)

DORIA, Renan Trevisoli. Operação e modelagem de transistores MOS sem junções.. 2013. Doctoral Thesis - Universidade de São Paulo (USP). Escola Politécnica São Paulo.