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Operation and Modeling of Junctionless MOSFETs in Cryogenic Environments

Grant number: 10/00537-6
Support Opportunities:Scholarships in Brazil - Doctorate
Effective date (Start): April 01, 2010
Effective date (End): March 31, 2013
Field of knowledge:Engineering - Electrical Engineering - Electrical, Magnetic and Electronic Measurements, Instrumentation
Principal Investigator:Marcelo Antonio Pavanello
Grantee:Renan Trevisoli Doria
Host Institution: Escola Politécnica (EP). Universidade de São Paulo (USP). São Paulo , SP, Brazil
Associated research grant:08/05792-4 - Design, fabrication and characterization of FinFET transistors, AP.TEM
News published in Agência FAPESP Newsletter about the scholarship:
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Academic Publications
(References retrieved automatically from State of São Paulo Research Institutions)
DORIA, Renan Trevisoli. Operation and modeling of MOS transistors without junctions.. 2013. Doctoral Thesis - Universidade de São Paulo (USP). Escola Politécnica (EP/BC) São Paulo.

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