Operation and Modeling of Junctionless MOSFETs in Cryogenic Environments

Grant number:	10/00537-6
Support Opportunities:	Scholarships in Brazil - Doctorate
Start date:	April 01, 2010
End date:	March 31, 2013
Field of knowledge:	Engineering - Electrical Engineering - Electrical, Magnetic and Electronic Measurements, Instrumentation

Principal Investigator:	Marcelo Antonio Pavanello
Grantee:	Renan Trevisoli Doria

Host Institution:	Escola Politécnica (EP). Universidade de São Paulo (USP). São Paulo , SP, Brazil

Associated research grant:	08/05792-4 - Design, fabrication and characterization of FinFET transistors, AP.TEM

News published in Agência FAPESP Newsletter about the scholarship:
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Articles published in other media outlets ( ):
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Academic Publications

(References retrieved automatically from State of São Paulo Research Institutions)

DORIA, Renan Trevisoli. Operation and modeling of MOS transistors without junctions.. 2013. Doctoral Thesis - Universidade de São Paulo (USP). Escola Politécnica (EP/BC) São Paulo.