Electrolyte-Gated transistors based on WO3 thin films: influence of the morphology and structure of the films on the device performance

• Grant number: 14/27079-9
• Support Opportunities: Scholarships in Brazil - Doctorate
• Start date: May 01, 2015
• End date: March 05, 2019
• Field of knowledge: Engineering - Materials and Metallurgical Engineering - Nonmetallic Materials
• Agreement: Coordination of Improvement of Higher Education Personnel (CAPES)
• Principal Investigator: Marcelo Ornaghi Orlandi
• Grantee: Martin Schwellberger Barbosa
• Host Institution: Instituto de Química (IQ). Universidade Estadual Paulista (UNESP). Campus de Araraquara. Araraquara , SP, Brazil
• Associated research grant: 13/07296-2 - CDMF - Center for the Development of Functional Materials, AP.CEPID
• Associated scholarship(s): 16/09033-7 - Electrolyte-gated transistors based on WO3 films, BE.EP.DR

Abstract

Electronic devices have a big market share and there is a continuous search for innovations to make them faster and more efficient. Between these devices, transistors correspond to approximately 4% of total market, and new technologies are wanted for the next generation of device technology. In this sense, fundamental research in Electrolyte-gated transistors are being studied with great interest, due to promising preliminary results. In this project, we intend to study the effects of morphology (shape and size) of WO3 nanostructures on electrolyte-gated transistors. The project will be developed between Unesp (Laboratório Interdisciplinar de Eletroquímica e Cerâmicas, LIEC) and Montreal Polytechnic School (Advanced Electroactive Group). (AU)

Scientific publications

(4)

(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)

BARBOSA, M. S.; OLIVEIRA, F. M. B.; MENG, X.; SOAVI, F.; SANTATO, C.; ORLANDI, M. O.. Tungsten oxide ion gel-gated transistors: how structural and electrochemical properties affect the doping mechanism. JOURNAL OF MATERIALS CHEMISTRY C, v. 6, n. 8, p. 1980-1987, FEB 28 2018. (13/07296-2, 14/27079-9, 15/50526-4, 16/09033-7)

DE OLIVEIRA SILVAL, GABRIEL VINICIUS; SUBRAMANIAN, ARUNPRABAHARAN; MENG, XIANG; ZHANG, SHIMING; BARBOSA, MARTIN S.; BALOUKAS, BILL; CHARTRAND, DANIEL; GONZALES, JUAN C.; ORLANDI, MARCELO ORNAGHI; SOAVI, FRANCESCA; et al. Tungsten oxide ion-gated phototransistors using ionic liquid and aqueous gating media. JOURNAL OF PHYSICS D-APPLIED PHYSICS, v. 52, n. 30, JUL 24 2019. (15/50526-4, 16/09033-7, 14/27079-9)

BARBOSA, MARTIN S.; BALKE, NINA; TSAI, WAN-YU; SANTATO, CLARA; ORLANDI, MARCELO O.. Structure of the Electrical Double Layer at the Interface between an Ionic Liquid and Tungsten Oxide in Ion-Gated Transistors. Journal of Physical Chemistry Letters, v. 11, n. 9, p. 3257-3262, MAY 7 2020. (15/50526-4, 16/09033-7, 14/27079-9)

BARBOSA, MARTIN S.; DA SILVA, RANILSON A.; SANTATO, CLARA; ORLANDI, MARCELO O.. Detection of H-2 facilitated by ionic liquid gating of tungsten oxide films. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v. 40, n. 1, JAN 2022. (14/27079-9, 15/50526-4, 16/09033-7)

Academic Publications

(References retrieved automatically from State of São Paulo Research Institutions)

BARBOSA, Martin Schwellberger. Study of performance and operation mechanisms on electrolyte-gated transistors based on tungsten oxide. 2019. Doctoral Thesis - Universidade Estadual Paulista (Unesp). Instituto de Química. Araraquara Araraquara.