Stability studies in transistors based on ZnO films produced by ultrasonic spray pyrolysis.

• Grant number: 16/03484-7
• Support Opportunities: Scholarships abroad - Research Internship - Doctorate
• Start date: August 01, 2016
• End date: July 31, 2017
• Field of knowledge: Physical Sciences and Mathematics - Physics - Condensed Matter Physics
• Principal Investigator: Neri Alves
• Grantee: Tiago Carneiro Gomes
• Supervisor: Jeff Kettle
• Host Institution: Faculdade de Ciências e Tecnologia (FCT). Universidade Estadual Paulista (UNESP). Campus de Presidente Prudente. Presidente Prudente , SP, Brazil
• Institution abroad: Bangor University, Wales
• Associated to the scholarship: 14/13904-8 - Investigations on ZnO and TIPs-Pentacene based transistors for printed hybrid inverter circuit, BP.DR

Abstract

Investments on the printed electronic area has been increased every year, but the development of all-printed logical circuits depends on the ability building thin film transistors (TFTs) successfully. In this context to achieve marketable printed electronic technologies, must be found ways to increase the long-term stability and lifetime of TFTs. Currently this is a critical issue. Thereby, in this one-year project we propose to look at ways of increase the stability and lifetime of the zinc oxide (ZnO) based transistors produced by ultrasonic spray pyrolysis. ZnO obtained by solution can be easily doped and, it is one of the most promising semiconductors to be applied in fully transparent electronic, due of their high transparency and high mobility. The long-term stability and lifetime of the ZnO TFTs will be evaluated from: addition of dopant; deposition conditions; thermal treatments; substrate surface characteristics and so on, which will be analyzed under exposure at environment and light. Finally, it should be highlighted that these studies will not be only important to improve the stability and lifetime of transistor, but also provide knowledge & technology toward the developing of printed electronic area.

Scientific publications

(4)

(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)

GOMES, TIAGO C.; KUMAR, DINESH; FUGIKAWA-SANTOS, LUCAS; ALVES, NERI; KETTLE, JEFF. Optimization of the Anodization Processing for Aluminum Oxide Gate Dielectrics in ZnO Thin Film Transistors by Multivariate Analysis. ACS COMBINATORIAL SCIENCE, v. 21, n. 5, p. 370-379, MAY 2019. (14/13904-8, 16/03484-7)

GOMES, TIAGO C.; KUMAR, DINESH; ALVES, NERI; KETTLE, JEFF; FUGIKAWA-SANTOS, LUCAS. The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors. JOVE-JOURNAL OF VISUALIZED EXPERIMENTS, n. 159, MAY 2020. (19/08019-9, 14/13904-8, 16/03484-7, 19/05620-3, 19/01671-2)

KUMAR, DINESH; GOMES, TIAGO CARNEIRO; ALVES, NERI; FUGIKAWA-SANTOS, LUCAS; SMITH, GRAHAM C.; KETTLE, JEFF. UV Phototransistors-Based Upon Spray Coated and Sputter Deposited ZnO TFTs. IEEE SENSORS JOURNAL, v. 20, n. 14, p. 7532-7539, JULY15, 2020. (19/05620-3, 14/13904-8, 16/03484-7)

GOMES, TIAGO C.; KUMAR, DINESH; ALVES, NERI; KETTLE, JEFF; FUGIKAWA-SANTOS, LUCAS. The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors. JOVE-JOURNAL OF VISUALIZED EXPERIMENTS, v. N/A, n. 159, p. 8-pg., 2020-05-01. (19/01671-2, 16/03484-7, 19/05620-3, 14/13904-8, 19/08019-9)