Scholarship 18/02604-4 - Eletrônica, Supercapacitores - BV FAPESP
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Study of printed supercapacitors integrating electrolyte-gated transistors

Grant number: 18/02604-4
Support Opportunities:Scholarships in Brazil - Doctorate
Start date until: May 01, 2018
End date until: July 31, 2023
Field of knowledge:Engineering - Materials and Metallurgical Engineering
Principal Investigator:Neri Alves
Grantee:Maykel dos Santos Klem
Host Institution: Faculdade de Ciências e Tecnologia (FCT). Universidade Estadual Paulista (UNESP). Campus de Presidente Prudente. Presidente Prudente , SP, Brazil
Associated scholarship(s):21/14141-1 - Study of laser-induced graphene-based electrodes aiming applications in biodegradable devices, BE.EP.DR

Abstract

The current development in printed electronics and the advancement of light, thin and flexible electronic devices require switching and energy storage devices with these same characteristics. In this context, devices printed on flexible substrates, such as paper and PET, have attracted much attention nowadays. The molybdenum disulphide, which is a transition metal dichalcogenide, has been considered as a substitute for graphene due its 2D strutucutre (nanosheets) and mainly because it has an intrinsic 1.8 eV bandgap. These characteristics makes MoS2 an interesting material for applications in electrolyte-gated transistors and supercapacitors. In addition to bandgap, its structure has a large specific area, enhancing the formation of electric double layer in such devices. The main objective of this project is to produce and characterize printed supercapacitors integrating electrolyte-gated transistors in the same structure, using MoS2 as main material. This hybrid device will bring applications in the development of circuits with fully printed, lightweight and flexible elements, which meets the demand of the current scenario of electronics. (AU)

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Scientific publications (6)
(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)
KLEM, MAYKEL DOS SANTOS; MORAIS, ROGERIO MIRANDA; GONCALVES RUBIRA, RAFAEL JESUS; ALVES, NERI. Paper-based supercapacitor with screen-printed poly (3, 4-ethylene dioxythiophene)-poly (styrene sulfonate)/multiwall carbon nanotube films actuating both as electrodes and current collectors. Thin Solid Films, v. 669, p. 96-102, . (15/18091-8, 18/02604-4)
DOS SANTOS KLEM, MAYKEL; LEONARDO NOGUEIRA, GABRIEL; ALVES, NERI. High-performance symmetric supercapacitor based on molybdenum disulfide/poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) composite electrodes deposited by spray-coating. INTERNATIONAL JOURNAL OF ENERGY RESEARCH, v. 45, n. 6, p. 18-pg., . (18/02604-4)
FERNANDES, JOSE DIEGO; VIEIRA, DOUGLAS HENRIQUE; KLEM, MAYKEL DOS SANTOS; ALVES, NERI. Dinaphtho[2,3-b:2 & PRIME;,3 & PRIME;-f]thieno[3,2-b]thiophene photoresistor: Generation of photocarriers and charge trapping. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, v. 165, p. 10-pg., . (20/12060-1, 13/14262-7, 20/12282-4, 18/02604-4)
DOS SANTOS KLEM, MAYKEL; LEONARDO NOGUEIRA, GABRIEL; ALVES, NERI. High-performance symmetric supercapacitor based on molybdenum disulfide/poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) composite electrodes deposited by spray-coating. INTERNATIONAL JOURNAL OF ENERGY RESEARCH, v. 45, n. 6, SI, . (18/02604-4)
BERTOLDO, LUIS H. T.; NOGUEIRA, GABRIEL L.; VIEIRA, DOUGLAS H.; KLEM, MAYKEL S.; OZORIO, MAIZA S.; ALVES, NERI. Analytical study of a solution-processed diode based on ZnO nanoparticles using multi-walled carbon nanutubes as Schottky contact. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, v. 33, n. 18, p. 11-pg., . (18/02037-2, 21/01548-6, 18/02604-4, 20/12282-4)
MORAIS, ROGERIO; VIEIRA, DOUGLAS HENRIQUE; KLEM, MAYKEL DOS SANTOS; GASPAR, CRISTINA; PEREIRA, LUIS; MARTINS, RODRIGO; ALVES, NERI. Printed in-plane electrolyte-gated transistor based on zinc oxide. Semiconductor Science and Technology, v. 37, n. 3, . (20/12282-4, 18/02604-4)

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