Scholarship 22/08613-0 - Nanotecnologia, Nanofios - BV FAPESP
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Study of millimeter wave devices fabricated on metallic-nanowire-membrane technology

Grant number: 22/08613-0
Support Opportunities:Scholarships abroad - Research Internship - Scientific Initiation
Start date until: December 12, 2022
End date until: March 11, 2023
Field of knowledge:Engineering - Electrical Engineering - Telecommunications
Principal Investigator:Rafael Abrantes Penchel
Grantee:Elígia Simionato
Supervisor: Philippe Ferrari
Host Institution: Faculdade de Engenharia. Universidade Estadual Paulista (UNESP). Campus Experimental São João da Boa Vista. São João da Boa Vista , SP, Brazil
Institution abroad: Université Grenoble Alpes (UGA), France  
Associated to the scholarship:22/03519-6 - Development of antenna arrays integrated to Butler arrays for millimeter-wave beamforming, BP.IC

Abstract

Extremely high frequencies in the 120 GHz band (116 GHz to 123 GHz) are under study and were recently allocated for unlicensed use due to high interest in the 7 GHz of continuous available spectrum. For that reason, the scientific initiation project being developed in Brazil, to which this project is related, intends to develop a Butler matrix based on metallic-nanowire-membrane (MnM) technology for operation in the 120 GHz band. However, the four-port devices that compose a Butler matrix - hybrid coupler and crossover - can be characterized in Brazil only up to 110 GHz, while in France it is possible to perform measurements on four-port devices up to 220 GHz. Therefore, this research internship project proposes the characterization of the 120-GHz-band hybrid coupler and crossover to evaluate the behavior, at higher frequencies, of devices based on MnM technology. Furthermore, this research internship project also proposes the study of slow-wave structures on MnM, a technology that enables the design of more compact devices, which is another goal of the scientific initiation project. (AU)

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