Full text
| |
| Author(s): |
Marcelo Jacob da Silva
Total Authors: 1
|
| Document type: | Doctoral Thesis |
| Press: | São Paulo. |
| Institution: | Universidade de São Paulo (USP). Instituto de Física (IF/SBI) |
| Defense date: | 2003-12-03 |
| Examining board members: |
Alain Andre Quivy;
Fernando Iikawa;
Wagner Nunes Rodrigues;
Maria Cecilia Barbosa da Silveira Salvadori;
Patrícia Lustoza de Souza
|
| Advisor: | Alain Andre Quivy |
| Abstract | |
In this work, we studied the molecular-beam apitaxy of InAs/GaaS quantum dots as well as their optical and morphological properties. The low growth rate approach allowed the manufacture of quantum dots large enough to provide na optical response in the vicinities of 1,3 m and 1,5 m at room temperature. The interest in this kind of structure lays on the fact that such wavelength Windows represent the regions of minimal signal attenuation in optical-fiber communication systems. The systematic investigation of the steps involved in the evolution of surface quantum dots grown under low rate allowed us to understand how such structures, with na average size much larger than taht normally obtained in the literature, could be achieved. The growth conditions were optimized to produce samples with narrow optical emissions tuned around the interesting wave length ranges. (AU) | |