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| Author(s): |
Marcos Augusto de Goes
Total Authors: 1
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| Document type: | Master's Dissertation |
| Press: | Campinas, SP. |
| Institution: | Universidade Estadual de Campinas (UNICAMP). Faculdade de Engenharia Elétrica e de Computação |
| Defense date: | 2005-07-29 |
| Examining board members: |
Jacobus Willibrordus Swart;
Everson Martins;
José Alexandre Diniz
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| Advisor: | Jacobus Willibrordus Swart |
| Abstract | |
This master degree dissertation describes the study, project and implementation of an optoelectronic integrated circuit (OEIC) using the heterojunction bipolar transistors (HBT) technology over a gallium arsenide substrate. The major advantage of this transistor is its high gain and low base resistance, allowing operation at frequencies in the range of gigahertz. The integration of the photodetection stage, performed by a PIN photodetector, with the amplifier circuit in a single chip is possible because the photodetector is built from the base, collector and subcollector layers of the HBT transistor. Thus, the parasitic resistances, capacitances and inductances between the connection of these two stages are minimized. In this way, monolithic receivers can operate at higher frequencies than hybrid receivers. The fabricated circuit is intended to work with 850 nm light sources and can be used in local area networks (LAN) (AU) | |