Full text
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| Author(s): |
Luciano Mendes Camillo
Total Authors: 1
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| Document type: | Master's Dissertation |
| Press: | São Paulo. |
| Institution: | Universidade de São Paulo (USP). Escola Politécnica (EP/BC) |
| Defense date: | 2000-11-06 |
| Examining board members: |
João Antonio Martino;
Marcelo Antonio Pavanello;
Sebastião Gomes dos Santos Filho
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| Advisor: | João Antonio Martino |
| Abstract | |
In this work is presented the study of main aspects of enhancement mode SOI MOSFET operation, and its analytical models to allow that eventual simplifications can bem ade without affecting the results obtained in the basic behavior of these devices in simulations realized through with SPICE simulator. It was realized an study of SOI-SPICE analytical simulator, its models for SOIU MOSFET transistors and the related physical/empirical parameters looking for simplifications on the analytical model. In order reach a better agrément in the results obtained by SOI-SPICE analytical simulations the fit-extraction methodology of SPICE parameters has been used through a comparison between the data and results obtained from bidimensional numerical simulations MEDICI for devices SOI MOSFET. A good agrément has been obtained to the current and voltage characteristic curves. A proposal of implementation of the physical substrate effect model in the SOI-SPICE circuit simulator has been presented. To provide this integration a binomial approximation was introduced. The results obtained by the SOI-SPICE simulations were compared to MEDICI two dimensional simulations, analytical model equations solution and experimental results, resulting in a good agrement in the studied consitions. (AU) | |