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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Induced characteristics of n- and p-channel OFETs by the choice of solvent for the dielectric layer towards the fabrication of an organic complementary circuit

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Author(s):
Cardoso, Lilian Soares ; Stefanelo, Josiani Cristina ; Faria, Roberto Mendonca
Total Authors: 3
Document type: Journal article
Source: Synthetic Metals; v. 220, p. 286-291, OCT 2016.
Web of Science Citations: 5
Abstract

In this study, we proposed a facile and low-cost method to fabricate complementary circuits, by the careful selection of the solvent for the dielectric layer. We show that the dielectric solvent exerts a direct influence on performance of organic field-effect transistors (OFETs), but the difficulty rests in finding solvents whose orthogonality does not attack the semiconducting layer in a device of top-gate architecture. OFETs (p- and n-channel), in which such orthogonality was achieved, exhibited the best performance, most probably due to the lower roughness of the semiconductor/dielectric interface. The search for transistors that have similar characteristics (mobility, threshold voltages, I-on/I-off, etc.) afforded the manufacture and characterization of an organic complementary circuit whose gain was higher than 7. This study therefore shows that the correct choice of solvents, especially that of the dielectric layer, is very important for the development of organic electronic circuits. (C) 2016 Elsevier B.V. All rights reserved. (AU)

FAPESP's process: 07/08688-0 - Electronic and optoelectronic polymer devices
Grantee:Roberto Mendonça Faria
Support type: Research Projects - Thematic Grants
FAPESP's process: 09/11304-5 - STUDY OF CMOS CIRCUITS BUILD BY INKJET PROCESS
Grantee:Josiani Cristina Stefanelo
Support type: Scholarships in Brazil - Doctorate