Structural and optical properties of diluted magnetic Ga1-xMnxAs-AlAs quantum wells grown on high-index GaAs planes

Author(s)

Gunes, Mustafa ^[1] ; Gumus, Cebrail ^[2] ; Gobato, Yara Galvao ^[3] ; Henini, Mohamed ^[4]

Affiliation

^[1] Adana Sci & Technol Univ, Engn & Nat Sci Fac, Dept Mat Engn, TR-01250 Adana - Turkey

^[2] Cukurova Univ, Dept Phys, TR-01330 Adana - Turkey

^[3] Univ Fed Sao Carlos, Dept Fis, BR-13560905 Sao Carlos, SP - Brazil

^[4] Univ Nottingham, Sch Phys & Astron, Nottingham Nanotechnol & Nanosci Ctr, Nottingham NG7 2RD - England

• Document type: Journal article
• Source: BULLETIN OF MATERIALS SCIENCE; v. 40, n. 7, p. 1355-1359, DEC 2017.
• Web of Science Citations: 0

Abstract

We report on the structural and optical properties of Ga1-xMnxAs-AlAs quantum wells (QWs) with x = 0.1% grown by molecular beam epitaxy (MBE) on semi-insulating GaAs substrates with orientations (100), (110), (311)B and (411)B. Atomic force microscopy (AFM), X-ray diffraction (XRD) and photoluminescence (PL) techniques were used to investigate these QWs. AFM results have evidenced the formation of Mn-induced islands, which are randomly distributed on the surface. These islands tend to segregate for samples grown on (110) and (411)B planes, while no clear segregation was observed for samples grown on (100) and (311)B orientations. Results show that the PL line width increases with Mn segregation. XRD measurements were used to determine 2 theta, d and cell parameters. (AU)

• FAPESP's process: 12/24055-6 - Optical, electrical and spin properties of semiconductor nanostructures and nanodevices
• Grantee: Yara Galvão Gobato
• Support Opportunities: Regular Research Grants