| Full text | |
| Author(s): |
Morelhao, Sergio L.
[1, 2]
;
Kycia, Stefan
[2]
;
Netzke, Samuel
[2]
;
Fornari, Celso I.
[3]
;
Rappl, Paulo H. O.
[3]
;
Abramof, Eduardo
[3]
Total Authors: 6
|
| Affiliation: | [1] Univ Sao Paulo, Inst Phys, BR-05508090 Sao Paulo - Brazil
[2] Univ Guelph, Dept Phys, Guelph, ON N1G 1W2 - Canada
[3] Natl Inst Space Res, BR-12227010 Sao Jose Dos Campos, SP - Brazil
Total Affiliations: 3
|
| Document type: | Journal article |
| Source: | Applied Physics Letters; v. 112, n. 10 MAR 5 2018. |
| Web of Science Citations: | 4 |
| Abstract | |
Epitaxial films of bismuth telluride topological insulators have received increasing attention due to their potential applications in spintronic and quantum computation. One of the most important properties of epitaxial films is the presence of interface defects due to the lateral lattice mismatch since electrically active defects can drastically compromise device performance. By describing hybrid reflections in hexagonal bismuth telluride films on cubic substrates, in-plane lattice mismatches were characterized with accuracy at least 20 times better than using other X-ray diffraction methods, providing clear evidence of 0.007% lateral lattice mismatch, consistent with stress relaxation associated with van der Waals gaps in the film structure. Published by AIP Publishing. (AU) | |
| FAPESP's process: | 16/22366-5 - Study of the properties of the topological insulator Bi2Te3 grown by molecular beam epitaxy |
| Grantee: | Celso Israel Fornari |
| Support Opportunities: | Scholarships in Brazil - Post-Doctoral |