de Andrade, Denise M.
de Camargo, Davi H. S.
Bof Bufon, Carlos C.
Total Authors: 5
 Brazilian Ctr Res Energy & Mat CNPEM, Brazilian Nanotechnol Natl Lab LNNano, BR-13083970 Campinas, SP - Brazil
 Ponta Grossa State Univ UEPG, Dept Mat Engn, BR-84030900 Ponta Grossa, Parana - Brazil
 Sao Paulo State Univ UNESP, Postgrad Program Mat Sci & Technol POSMAT, BR-17033360 Bauru, SP - Brazil
Total Affiliations: 3
FEB 12 2020.
Web of Science Citations:
The effective utilization of vertical organic transistors in high current density applications demands further reduction of channel length (given by the thickness of the organic semiconducting layer and typically reported in the 100 nm range) along with the optimization of the source electrode structure. Here we present a viable solution by applying rolled-up metallic nanomembranes as the drain-electrode (which enables the incorporation of few nanometer-thick semiconductor layers) and by lithographically patterning the source-electrode. Our vertical organic transistors operate at ultra-low voltages and demonstrate high current densities (similar to 0.5 A cm(-2)) that are found to depend directly on the number of source edges, provided the source perforation gap is wider than 250 nm. We anticipate that further optimization of device structure can yield higher current densities (similar to 10 A cm(-2)). The use of rolled-up drain-electrode also enables sensing of humidity and light which highlights the potential of these devices to advance next-generation sensing technologies. (AU)