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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Non-linear Raman shift-stress behavior in top-down fabricated highly strained silicon nanowires

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Author(s):
Spejo, L. B. [1, 2] ; Arrieta-Concha, J. L. [1, 2] ; Puydinger dos Santos, V, M. ; Barros, A. D. [1, 3] ; Bourdelle, K. K. [4] ; Diniz, J. A. [1, 3] ; Minamisawa, R. A. [5]
Total Authors: 7
Affiliation:
[1] Univ Estadual Campinas, Sch Elect & Comp Engn, BR-13083852 Campinas, SP - Brazil
[2] Univ Estadual Campinas, Ctr Semicond Components & Nanotechnol, BR-13083870 Campinas, SP - Brazil
[3] Puydinger dos Santos, M., V, Univ Estadual Campinas, Ctr Semicond Components & Nanotechnol, BR-13083870 Campinas, SP - Brazil
[4] Soitec, Parc Technol Fontaines, F-38190 Bernin - France
[5] Fachhochschu Nordwestschweiz, Inst Math & Nat Wissensch, CH-5210 Windisch - Switzerland
Total Affiliations: 5
Document type: Journal article
Source: Journal of Applied Physics; v. 128, n. 4 JUL 28 2020.
Web of Science Citations: 0
Abstract

Strain engineering is a key technology to continue Moore's law with silicon or any other foreseen semiconductor in very large scale integration. The characterization of strain in nanostructures is important to determine the potential of these technologies, and it is typically performed using micro-Raman when investigating strained silicon. Here, we report on the Raman shift-stress behavior from the (001) silicon surface of highly strained ultra-thin (15nm-thick) suspended nanowires with stresses in the range of 0-6.3GPa along the {[}110] direction. We employ a strain technology that offers a precise control of stress values at large sampling while reducing variability. The stress level of the nanostructures has been accurately evaluated by the finite element method simulations and further correlated to the Raman spectra. For stresses below 4.5GPa, the aforementioned behavior was linear and the extracted stress shift coefficient was in agreement with those reported in the literature. For stresses greater than 4.5GPa, we show that the Raman shift-stress behavior resembles a quadratic function. (AU)

FAPESP's process: 18/02598-4 - Giant Piezoresistance and electrical carriers mobility of ultra-strained silicon nanowires
Grantee:Lucas Barroso Spejo
Support Opportunities: Scholarships in Brazil - Master