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Electrical characterization and tridimensional simulation of nanowires MOS transistors

Grant number: 16/06301-0
Support type:Scholarships abroad - Research Internship - Doctorate
Effective date (Start): September 05, 2016
Effective date (End): September 04, 2017
Field of knowledge:Engineering - Electrical Engineering
Principal Investigator:Marcelo Antonio Pavanello
Grantee:Bruna Cardoso Paz
Supervisor abroad: Casse Mikael
Home Institution: Campus de São Bernardo do Campo. Centro Universitário da FEI (UNIFEI). Fundação Educacional Inaciana Padre Sabóia de Medeiros (FEI). São Bernardo do Campo , SP, Brazil
Local de pesquisa : Commissariat à l'énergie atomique et aux énergies alternatives (CEA), France  
Associated to the scholarship:15/10491-7 - Electrical characterization and tridimensional simulation of nanowires MOS transistors, BP.DR

Abstract

This project aims to sustain an international cooperation between the research group coordinated by Prof. Dr. Marcelo Antonio Pavanello, from Department of Electrical Engineering of Centro Universitário da FEI, situated in São Bernardo do Campo, Brazil, and the research group coordinated by Dr. Gilles Reimbold and Dr. Mikaël Cassé, from the Laboratoire d'électronique et de technologie de l'information (Leti), situated in Grenoble, France. While Leti is one of the few research centers in the world capable of fabricating aggressively scaled devices, such as nanowires MOSFETs, the research group of Prof. Dr. Pavanello is the first and the only one in Brazil studying ultra-scaled nanowires, through Ms. Paz work.The main focus of the project will be the electrical characterization and tridimensional advanced simulations of nanowires MOSFETs implemented in Silicon-On-Insulator technology. The project will be conducted by Mrs. Paz as a part of her Ph. D. thesis at FEI, in a stay of 12 months at Leti. During her stay Mrs. Paz will work with nanowires MOSFETs considering strained and unstrained transistors, different silicon and silicon-germanium bonds and wide ranges for channel length and channel width. Cryogenic operation at low temperature down to 4K will be also explored as one of the main subjects.The stay at Leti will be of main interest in her Ph. D. work as she will be able to experimentally study some of the main candidates for the next technological nodes, those cannot be found in other place but an advanced research center such as Leti. (AU)

Scientific publications
(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)
PAZ, BRUNA CARDOSO; CASSE, MIKAEL; BARRAUD, SYLVAIN; REIMBOLD, GILLES; VINET, MAUD; FAYNOT, OLIVIER; PAVANELLO, MARCELO ANTONIO. Electrical characterization of vertically stacked p-FET SOI nanowires. Solid-State Electronics, v. 141, p. 84-91, MAR 2018. Web of Science Citations: 2.

Please report errors in scientific publications list by writing to: cdi@fapesp.br.