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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

UV-photocurrent response of zinc oxide based devices: Application to ZnO/PEDOT:PSS hydrid Schottky diodes

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Author(s):
Vieira, Douglas Henrique [1] ; Ozorio, Maiza da Silva [1] ; Nogueira, Gabriel Leonardo [1] ; Fugikawa-Santos, Lucas [2] ; Alves, Neri [1]
Total Authors: 5
Affiliation:
[1] Sao Paulo State Univ UNESP, Fac Sci & Technol FCT, Dept Phys, Presidente Prudente, SP - Brazil
[2] Sao Paulo State Univ UNESP, Inst Geosci & Exact Sci IGCE, Dept Phys, Rio Claro, SP - Brazil
Total Affiliations: 2
Document type: Journal article
Source: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING; v. 121, JAN 2021.
Web of Science Citations: 1
Abstract

The UV photocurrent response of thin films of wide bandgap semiconductors such as zinc oxide (ZnO) can be applied to a great number of electronic devices aiming applications in environmental sensing or UV-detection. Electronic devices like thin-film transistors or Schottky diodes commonly present multiple parameters of elec-trical characteristic, which can be beneficially exploited to provide more information than sensors based on purely resistive or capacitive response. We manufactured Schottky diodes using spray-coated ZnO and poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) as an easy, simple and low-cost method for producing multiparametric UV-photodetectors. The diode parameters presented rectification ratios (RR) as high as 104 and ideality factors as low as 1.3, and their characteristic curves were analyzed by Cheung's method to determine the effect of UV irradiation on the ideality factor, series resistance and Schottky barrier height. The study of the photocurrent response from spray-coated ZnO films as a function of geometric parameters and UV intensity demonstrated a transition from bimolecular to monomolecular recombination process at higher irradiance values, as a result of the adsorption/desorption dynamics of molecular oxygen at the semiconductor/air interface. (AU)

FAPESP's process: 18/04169-3 - Development of a UV photodetector using a Schottky diode and a transistor based on ZnO by spray pyrolysis
Grantee:Douglas Henrique Vieira
Support Opportunities: Scholarships in Brazil - Master
FAPESP's process: 19/01671-2 - Printed hybrid devices for UV photodetectors and gas sensors.
Grantee:Neri Alves
Support Opportunities: Regular Research Grants
FAPESP's process: 19/08019-9 - Transparent/flexible transistors: from the study of transport properties to the development of circuitries
Grantee:Lucas Fugikawa Santos
Support Opportunities: Regular Research Grants