Room-Temperature Negative Differential Resistance in Surface-Supported Metal-Organic Framework Vertical Heterojunctions

Author(s)

Albano, Luiz G. S. ^[1] ; de Camargo, Davi H. S. ^{[1, 2]} ; Schleder, Gabriel R. ^{[3, 1]} ; Deeke, Samantha G. ^{[1, 2]} ; Vello, Tatiana P. ^{[1, 4]} ; Palermo, Leirson D. ^[1] ; Correa, Catia C. ^[1] ; Fazzio, Adalberto ^{[3, 1]} ; Woell, Christof ^[5] ; Bufon, Carlos C. B. ^{[1, 2, 4]}

Affiliation

^[1] Brazilian Ctr Res Energy & Mat CNPEM, Brazilian Nanotechnol Natl Lab LNNano, BR-13083970 Campinas, SP - Brazil

^[2] Sao Paulo State Univ ESP, Postgrad Program Mat Sci & Technol POSMAT, BR-17033360 Bauru, SP - Brazil

^[3] Fed Univ ABC UFABC, BR-09210580 Santo Andre, SP - Brazil

^[4] Univ Campinas UNICAMP, Inst Chem IQ, Dept Phys Chem, BR-13084862 Campinas, SP - Brazil

^[5] Karlsruhe Inst Technol KIT, Inst Funct Interfaces IFG, D-76344 Eggenstein Leopoldshafen - Germany

• Document type: Journal article
• Source: SMALL; v. 17, n. 35 JUL 2021.
• Web of Science Citations: 0

Abstract

The advances of surface-supported metal-organic framework (SURMOF) thin-film synthesis have provided a novel strategy for effectively integrating metal-organic framework (MOF) structures into electronic devices. The considerable potential of SURMOFs for electronics results from their low cost, high versatility, and good mechanical flexibility. Here, the first observation of room-temperature negative differential resistance (NDR) in SURMOF vertical heterojunctions is reported. By employing the rolled-up nanomembrane approach, highly porous sub-15 nm thick HKUST-1 films are integrated into a functional device. The NDR is tailored by precisely controlling the relative humidity (RH) around the device and the applied electric field. The peak-to-valley current ratio (PVCR) of about two is obtained for low voltages (<2 V). A transition from a metastable state to a field emission-like tunneling is responsible for the NDR effect. The results are interpreted through band diagram analysis, density functional theory (DFT) calculations, and ab initio molecular dynamics simulations for quasisaturated water conditions. Furthermore, a low-voltage ternary inverter as a multivalued logic (MVL) application is demonstrated. These findings point out new advances in employing unprecedented physical effects in SURMOF heterojunctions, projecting these hybrid structures toward the future generation of scalable functional devices. (AU)

• FAPESP's process: 17/18139-6 - Machine learning for Materials Science: 2D materials discovery and design
• Grantee: Gabriel Ravanhani Schleder
• Support Opportunities: Scholarships in Brazil - Doctorate
• FAPESP's process: 14/25979-2 - Fabrication and characterization of devices and systems based on hybrid nanomembranes
• Grantee: Carlos César Bof Bufon
• Support Opportunities: Research Grants - Young Investigators Grants
• FAPESP's process: 16/25346-5 - Capacitive devices for hybrid nanostructures characterization: study of electrical properties of surface metal-organic frameworks -SURMOFs- and metallophthalocyanines
• Grantee: Tatiana Parra Vello
• Support Opportunities: Scholarships in Brazil - Doctorate
• FAPESP's process: 14/50906-9 - INCT 2014: in Functional Complex Materials
• Grantee: Fernando Galembeck
• Support Opportunities: Research Projects - Thematic Grants
• FAPESP's process: 19/01561-2 - Study of Surface-Mounted Metal-Organic Frameworks (SURMOFs) growth mechanisms to application on electrical devices
• Grantee: Tatiana Parra Vello
• Support Opportunities: Scholarships abroad - Research Internship - Doctorate
• FAPESP's process: 17/02317-2 - Interfaces in materials: electronic, magnetic, structural and transport properties
• Grantee: Adalberto Fazzio
• Support Opportunities: Research Projects - Thematic Grants
• FAPESP's process: 17/25553-3 - Fabrication and characterization of self-rolled up nanomembranes of surface-supported metal-organic frameworks (SURMOFs) for applications in ultracompact electronic devices
• Grantee: Luíz Gustavo Simão Albano
• Support Opportunities: Scholarships in Brazil - Post-Doctoral