Advanced search
Start date
(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Room-Temperature Negative Differential Resistance in Surface-Supported Metal-Organic Framework Vertical Heterojunctions

Full text
Albano, Luiz G. S. [1] ; de Camargo, Davi H. S. [1, 2] ; Schleder, Gabriel R. [3, 1] ; Deeke, Samantha G. [1, 2] ; Vello, Tatiana P. [1, 4] ; Palermo, Leirson D. [1] ; Correa, Catia C. [1] ; Fazzio, Adalberto [3, 1] ; Woell, Christof [5] ; Bufon, Carlos C. B. [1, 2, 4]
Total Authors: 10
[1] Brazilian Ctr Res Energy & Mat CNPEM, Brazilian Nanotechnol Natl Lab LNNano, BR-13083970 Campinas, SP - Brazil
[2] Sao Paulo State Univ ESP, Postgrad Program Mat Sci & Technol POSMAT, BR-17033360 Bauru, SP - Brazil
[3] Fed Univ ABC UFABC, BR-09210580 Santo Andre, SP - Brazil
[4] Univ Campinas UNICAMP, Inst Chem IQ, Dept Phys Chem, BR-13084862 Campinas, SP - Brazil
[5] Karlsruhe Inst Technol KIT, Inst Funct Interfaces IFG, D-76344 Eggenstein Leopoldshafen - Germany
Total Affiliations: 5
Document type: Journal article
Source: SMALL; v. 17, n. 35 JUL 2021.
Web of Science Citations: 0

The advances of surface-supported metal-organic framework (SURMOF) thin-film synthesis have provided a novel strategy for effectively integrating metal-organic framework (MOF) structures into electronic devices. The considerable potential of SURMOFs for electronics results from their low cost, high versatility, and good mechanical flexibility. Here, the first observation of room-temperature negative differential resistance (NDR) in SURMOF vertical heterojunctions is reported. By employing the rolled-up nanomembrane approach, highly porous sub-15 nm thick HKUST-1 films are integrated into a functional device. The NDR is tailored by precisely controlling the relative humidity (RH) around the device and the applied electric field. The peak-to-valley current ratio (PVCR) of about two is obtained for low voltages (<2 V). A transition from a metastable state to a field emission-like tunneling is responsible for the NDR effect. The results are interpreted through band diagram analysis, density functional theory (DFT) calculations, and ab initio molecular dynamics simulations for quasisaturated water conditions. Furthermore, a low-voltage ternary inverter as a multivalued logic (MVL) application is demonstrated. These findings point out new advances in employing unprecedented physical effects in SURMOF heterojunctions, projecting these hybrid structures toward the future generation of scalable functional devices. (AU)

FAPESP's process: 17/18139-6 - Machine learning for Materials Science: 2D materials discovery and design
Grantee:Gabriel Ravanhani Schleder
Support type: Scholarships in Brazil - Doctorate
FAPESP's process: 14/25979-2 - Fabrication and characterization of devices and systems based on hybrid nanomembranes
Grantee:Carlos Cesar Bof Bufon
Support type: Research Grants - Young Investigators Grants
FAPESP's process: 16/25346-5 - Capacitive devices for hybrid nanostructures characterization: study of electrical properties of surface metal-organic frameworks -SURMOFs- and metallophthalocyanines
Grantee:Tatiana Parra Vello
Support type: Scholarships in Brazil - Doctorate
FAPESP's process: 14/50906-9 - INCT 2014: in Functional Complex Materials
Grantee:Fernando Galembeck
Support type: Research Projects - Thematic Grants
FAPESP's process: 19/01561-2 - Study of Surface-Mounted Metal-Organic Frameworks (SURMOFs) growth mechanisms to application on electrical devices
Grantee:Tatiana Parra Vello
Support type: Scholarships abroad - Research Internship - Doctorate
FAPESP's process: 17/02317-2 - Interfaces in materials: electronic, magnetic, structural and transport properties
Grantee:Adalberto Fazzio
Support type: Research Projects - Thematic Grants
FAPESP's process: 17/25553-3 - Fabrication and characterization of self-rolled up nanomembranes of surface-supported metal-organic frameworks (SURMOFs) for applications in ultracompact electronic devices
Grantee:Luíz Gustavo Simão Albano
Support type: Scholarships in Brazil - Post-Doctorate