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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Analysis of electrical transients in the fourth quadrant of thin films photovoltaics: The case of organic bulk heterojunction solar cell

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Author(s):
Pereira da Cunha, Mariana Richelle [1] ; Bezerra Amorim, Daniel Roger [1, 2] ; Faria, Gregorio Couto [1] ; Coutinho, Douglas Jose [3] ; Faria, Roberto Mendonca [1]
Total Authors: 5
Affiliation:
[1] Univ Sao Paulo, Inst Fis Sao Carlos, POB 369, BR-13560970 Sao Carlos, SP - Brazil
[2] Fed Inst Piaui Piaui IFPI, BR-64410000 Angical Do Piaui, PI - Brazil
[3] Fed Univ Technol Parana UTFPR, BR-85902490 Toledo, PR - Brazil
Total Affiliations: 3
Document type: Journal article
Source: SOLAR ENERGY MATERIALS AND SOLAR CELLS; v. 231, OCT 2021.
Web of Science Citations: 0
Abstract

Current-voltage (J-V) measurements under illumination are essential for studying solar cells. They directly provide fundamental parameters of the solar cell, as the short-circuit current (J(SC)), the open-circuit voltage (V-OC), and the fill-factor (FF); but a deeper investigation of transport phenomena along the fourth quadrant is hampered by the tight linear scale, limited between zero to similar to 1 V. In this work, we present transient measurements carried out in an organic solar cell (ITO/PEDOT:PSS/PTB7-Th:PC71BM/Ca/Al), which allows to analyze J-V curves, by extending the scale from a linear to a logarithmic scale. For this, we used a circuit similar to that used in transient measurements, by replacing the voltage source by a variable load resistance R-L (from 50 Omega to 1 M Omega). A voltage transient Delta V(t) and its time decay tau are measured over each R-L, and tau-R-L curves were obtained, keeping the device under different intensities of sunlight. Each tau-R-L curve is divided in three distinct zones: one in which the extraction dominates the photocurrent; the second where a competition between extraction and non-geminate recombination is established; and the third, dominated by recombination and diffusion. An equivalent circuit is used to analyze the tau-R-L curves, in which the diode resistance plays a relevant role, especially in the region close to V-OC. Not only recombination mechanisms can be better analyzed through this new approach, but also the distinction between drift and diffusion transports. (AU)

FAPESP's process: 14/50869-6 - INCT 2014: on Organic Electronics
Grantee:Roberto Mendonça Faria
Support Opportunities: Research Projects - Thematic Grants