| Full text | |
| Author(s): |
Antunes, Vinicius G.
;
Figueroa, Carlos A.
;
Alvarez, Fernando
Total Authors: 3
|
| Document type: | Journal article |
| Source: | Langmuir; v. 38, n. 6, p. 8-pg., 2022-02-15. |
| Abstract | |
This paper reports the competition of H2O (residual) and H-2 by site (defects) on the Si surface, created by Xe+ ion bombardment. X-ray photoelectron spectroscopy (XPS) in an ultrahigh vacuum system attached to the sample preparation chamber provided the data for the analyses. As hydrogen cannot be detected by XPS, an indirect method to evaluate the O and H cover ratio was developed. The hydrogen passivation effect obtained by the formation of the Si-H bond due to H-2 chemisorption limits Si-OH and Si-O-Si bonds, which are products of H2O dissociation. In addition, the results have shown that Xe+ ion bombardment diminished the H-2 chemisorption energy barrier onto Si. (AU) | |
| FAPESP's process: | 12/10127-5 - Research and development of nanostructured materials for electronic and surface physics applications |
| Grantee: | Fernando Alvarez |
| Support Opportunities: | Research Projects - Thematic Grants |
| FAPESP's process: | 19/00757-0 - Study and control of the crystalline orientations in MoS2/TiO2 and MoS2/TiO2:H heterojunctions and their effects on its physicochemical properties |
| Grantee: | Fernando Graniero Echeverrigaray |
| Support Opportunities: | Scholarships in Brazil - Post-Doctoral |
| FAPESP's process: | 19/18460-4 - Synthesis, thermo-mechanical and tribological properties of advanced multicomponent materials of high entropy |
| Grantee: | Fernando Alvarez |
| Support Opportunities: | Regular Research Grants |
| FAPESP's process: | 18/24461-0 - Study and synthesis of High Entropy Alloy (HEA) thin films |
| Grantee: | Felipe Cemin |
| Support Opportunities: | Scholarships in Brazil - Post-Doctoral |