3D Inductors with Nanowire Through Substrate Vias

Author(s)

Serrano, A. L. C. ; Pinheiro, J. M. ; Jeong, S. ; Gomes, L. G. ; Alvarenga, R. C. A. ; Ferrari, P. ; Rehder, G. P. ; IEEE

• Document type: Journal article
• Source: 2017 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS); v. N/A, p. 4-pg., 2017-01-01.

Abstract

This paper presents a novel 3D inductor (solenoid) fabricated on a 50-mu m thick AAO membrane using nanowire-vias. Several inductors were fabricated in this simple and low-cost technology with nanowires. They were measured up to 110 GHz and compared to the state-of-the-art results presented in the literature in different technologies: CMOS, glass, LCP and MEMS. The simulations are in good agreement with measurement, predicting the great potential of these inductors. The first 3D inductors using nanowire-vias presented inductances from 0.5 nH to 1.7 nH with small areas that range from 0.03 mm(2) to 0.08 mm(2). (AU)

• FAPESP's process: 11/18167-3 - RF MEMS for millimetric waves using commercial CMOS process
• Grantee: Gustavo Pamplona Rehder
• Support Opportunities: Research Grants - Young Investigators Grants
• FAPESP's process: 12/15159-2 - High performance and lowcost MnM devices for millimeter-wave applications from 30 to 110 GHz
• Grantee: Ariana Maria da Conceicao Lacorte Caniato Serrano
• Support Opportunities: Research Grants - Young Investigators Grants