Influence of the Temperature on the Operational Transconductance Amplifier designed with triple gate SOI FinFETs

Author(s)

Hilkner, Henrique ; Der Agopian, Paula Ghedini ; Martino, Joao Antonio

• Document type: Journal article
• Source: 2024 38TH SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES, SBMICRO 2024; v. N/A, p. 4-pg., 2024-01-01.

Abstract

This paper presents the temperature influence on the Operational Transconductance Amplifier (OTA) designed with triple gate Silicon-On-Insulator (SOI) FinFETs. The FinFET electrical characteristics were obtained experimentally at room temperature, and the results were used to model it using Lookup table in Verilog-A. Based on the transistors experimental data, the OTA was simulated at room temperature and also for low and high temperature (from 180 to 600 K) using simulation device characteristics, with and without thermal compensation (TC). The increases in temperature resulted in the decreases of the voltage gain, gain-bandwidth (GBW) due to the mobility degradation, and in the increases in phase margin. For both circuits, from 180 to 600 K, the values of the parameters variations and the resulting curves were very similar: the results demonstrated an average reduction per 100 K of 6.8% in voltage gain at low frequencies, 17.1% in GBW, 14.5% in the transistor efficiency gm/ID, and a slight average increase of 1.9% in phase margins. The little differences between the OTA circuits with and without TC bias circuit do not require a complex thermal compensated bias circuit. (AU)

• FAPESP's process: 20/04867-2 - High energy physics and instrumentation with the LHC-CERN
• Grantee: Marcelo Gameiro Munhoz
• Support Opportunities: Special Projects