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(Reference retrieved automatically from Google Scholar through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

ZnO extended-gate field-effect transistors as pH sensors

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Batista‚ PD ; Mulato‚ M.
Total Authors: 2
Document type: Journal article
Source: Applied Physics Letters; v. 87, p. 143508, 2005.

The objective of this work is the study and characterization of zinc oxide (ZnO) as pH sensor. We used an extended-gate field-effect transistor (EGFET) to obtain the response of ZnO as a function of pH. Sol-gel was used for the production of ZnO films because this is a low cost and easy fabrication procedure. The ZnO powder was obtained at different temperatures of calcination, from 150 up to 500°C. The samples were investigated by x-ray diffraction, infrared spectroscopy, thermogravimetric analysis and differential thermal analysis. The films were investigated as pH sensors (range 2–12) and the ZnO EGFET shows a sensitivity of 38mV∕pH. (AU)