| Full text | |
| Author(s): |
Pela, R. R.
[1]
;
Marques, M.
[1]
;
Ferreira, L. G.
[2, 1]
;
Furthmueller, J.
[3]
;
Teles, L. K.
[1]
Total Authors: 5
|
| Affiliation: | [1] Inst Tecnol Aeronaut, BR-12228900 Sao Jose Dos Campos, SP - Brazil
[2] Univ Sao Paulo, Inst Fis, BR-05315970 Sao Paulo - Brazil
[3] Univ Jena, Inst Festkorpertheorie & Opt, D-07743 Jena - Germany
Total Affiliations: 3
|
| Document type: | Journal article |
| Source: | Applied Physics Letters; v. 100, n. 20, p. 202408-202408, 2012. |
| Web of Science Citations: | 21 |
| Abstract | |
Among all magnetic semiconductors, GaMnAs seems to be the most important one. In this work, we present accurate first-principles calculations of GaMnAs within the GGA-1/2 approach: We concentrate our efforts in obtaining the position of the peak of Mn-d levels in the valence band and also the majority spin band gap. For the position of the Mn-d peak, we find a value of 3.3 eV below the Fermi level, in good agreement with the most recent experimental results of 3.5 and 3.7 eV. An analytical expression that fits the calculated E-g(x) for majority spin is derived in order to provide ready access to the band gap for the composition range from 0 to 0.25. We found a value of 3.9 eV for the gap bowing parameter. The results agree well with the most recent experimental data. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4718602] (AU) | |
| FAPESP's process: | 08/11423-1 - Simulation of quantum devices based on spin |
| Grantee: | Ronaldo Rodrigues Pelá |
| Support Opportunities: | Scholarships in Brazil - Doctorate (Direct) |
| FAPESP's process: | 06/05858-0 - Theoretical study of semiconductor alloys for applications in spintronics and optoelectronics |
| Grantee: | Lara Kühl Teles |
| Support Opportunities: | Research Grants - Young Investigators Grants |