Advanced search
Start date
(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Tuning resistive switching on single-pulse doped multilayer memristors

Full text
Siles, Pablo F. [1, 2, 3] ; de Pauli, Muriel [1, 4] ; Bof Bufon, Carlos Cesar [2, 5] ; Ferreira, Sukarno O. [1, 6] ; Bettini, Jefferson [1] ; Schmidt, Oliver G. [2, 3] ; Malachias, Angelo [1, 7]
Total Authors: 7
[1] LNLS, Lab Nacl Luz Sincrotron, BR-6192 Campinas, SP - Brazil
[2] IFW Dresden, Inst Integrat Nanosci, D-01069 Dresden - Germany
[3] TU Chemnitz, D-09107 Chemnitz - Germany
[4] Univ Estadual Campinas, UNICAMP, Inst Fis Gleb Wataghin, BR-13081970 Campinas, SP - Brazil
[5] LNNano, Lab Nacl Nanotecnol, BR-6192 Campinas, SP - Brazil
[6] Univ Fed Vicosa, Dept Fis, Vicosa, MG - Brazil
[7] Univ Fed Minas Gerais, Dept Fis, BR-30161 Belo Horizonte, MG - Brazil
Total Affiliations: 7
Document type: Journal article
Source: Nanotechnology; v. 24, n. 3 JAN 25 2013.
Web of Science Citations: 12

Short-period multilayers containing ultrathin atomic layers of Al embedded in titanium dioxide (TiO2) film-here called single-pulse doped multilayers-are fabricated by atomic layer deposition (ALD) growth methods. The approach explored here is to use Al atoms through single-pulsed deposition to locally modify the chemical environment of TiO2 films, establishing a chemical control over the resistive switching properties of metal/oxide/metal devices. We show that this simple methodology can be employed to produce well-defined and controlled electrical characteristics on oxide thin films without compound segregation. The increase in volume of the embedded Al2O3 plays a crucial role in tuning the conductance of devices, as well as the switching bias. The stacking of these oxide compounds and their use in electrical devices is investigated with respect to possible crystalline phases and local compound formation via chemical recombination. It is shown that our method can be used to produce compounds that cannot be synthesized a priori by direct ALD growth procedures but are of interest due to specific properties such as thermal or chemical stability, electrical resistivity or electric field polarization possibilities. The monolayer doping discussed here impacts considerably on the broadening of the spectrum of performance and technological applications of ALD-based memristors, allowing for additional degrees of freedom in the engineering of oxide devices. S Online supplementary data available from (AU)

FAPESP's process: 10/18548-4 - Synchrotron radiation study on the growth of al and in nitride nanostructures and thin films by Atomic Layer Deposition
Grantee:Harry Westfahl Junior
Support type: Research Grants - Visiting Researcher Grant - Brazil
FAPESP's process: 09/09027-3 - Study of growth, crystallization and surface structure of thin films, multilayers and nanostructures obtained by the atomic layer deposition method
Grantee:Angelo Malachias de Souza
Support type: Research Grants - Young Investigators Grants